Eur. Phys. J. B 83, 173-179 (2011)
https://doi.org/10.1140/epjb/e2011-20253-4

Transport properties of orbitally hybridized organic semiconductors

¹ Department of Applied Physics, National University of Kaohsiung, 811 Kaohsiung, Taiwan, R.O.C.
² Department of Physics, National Chung Hsing University, 402 Taichung, Taiwan, R.O.C.
³ Department of Applied Physics, National Chiayi University, 600 Chiayi, Taiwan, R.O.C.

Corresponding author: ^a sjs@nuk.edu.tw

Received: 30 March 2011
Revised: 7 August 2011
Published online: 23 September 2011

Abstract

A microscopic theory based on the orbital hybridization model via single orbital approximation is developed to calculate the current variation in organic semiconductors that are coupled to the external orbits from the environment. The charge transfer resulted from the orbital hybridization between the environment and the organic semiconductor rebuilds the energy levels and eventually alters the transport properties of the organic semiconductor. Two parameters in our theory, the orbital energy level of the environment relative to the energy level of organic semiconductor and the orbital hybridization interaction, dominate the current variation in the organic semiconductors. Our results show that the suppression of atomic dimerization due to orbital hybridization gives rise to an increase of electrical conduction in organic semiconductor. Also, after coupling with the environment, the charge-donating organic semiconductors are more conductive than the charge-accepting ones.