https://doi.org/10.1140/epjb/e2011-20482-5
Regular Article
Dependence of hole effective mass on nitrogen concentration in W-type strained InAs(N)/GaSb/InAs(N) quantum well lasers
1
Laboratoire : Matériaux avancés et phénomènes quantique, Faculté
des Sciences de Tunis, Université de Tunis El Manar, Campus
Universitaire, 2092
Tunis,
Tunisia
2
Département de Physique, Faculté des Sciences de Bizerte,
Université de Carthage, 7021
Jarzona,
Tunisia
3
Unité de Recherche de Physique des Solides, Département de
Physique, Faculté des Sciences de Monastir, 5019
Monastir,
Tunisia
a e-mail: said.ridene@fst.rnu.tn
Received: 16 June 2011
Received in final form: 11 October 2011
Published online: 23 January 2012
We have investigated the effects of nitrogen N concentration on the properties of hole subbands and effective mass in dilute-nitride type-II InAsN/GaSb laser diodes on InAs substrate with “W” design. Using a 5-bands k·p model, we obtained interesting numerical results for the heavy-hole (hh) and the light-hole (lh) subbands. The hole effective masses were found to be very sensitive to the nitrogen concentration and to the differences in the Luttinger parameters between the well and the barrier. In addition, the hole effective masses are found to be strongly affected by band-anticrossing (BAC) model.
Key words: Solid State and Materials
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag, 2012