https://doi.org/10.1140/epjb/e2011-20690-y
Regular Article
Goos-Hänchen effect of spin electron beams in a parallel double δ-barrier magnetic nanostructure
1
Department of Physics, Shaoyang University,
Hunan
422004, P.R.
China
2
Department of Electronics and Communication, Shenzhen Institute of
Technology, Shenzhen
518000, P.R.
China
a e-mail: mwlu@163.com
Received:
23
August
2011
Received in final form:
31
October
2011
Published online:
11
January
2012
Recently, a spin beam splitter based on parallel double δ-barrier magnetic nanostructure was proposed [X. Chen, C.F. Li, Y. Ban, Phys. Rev. B 77, 073307 (2008)]. However, the main result, the simultaneously large and opposite Goos-Hänchen (GH) displacements for spin electron beams observed by them, is shown to be only an artifact. Therefore, we reexamine GH effect of spin electron beams in this device. We show that, such a device does possess a considerable spin-beam split effect, and its spin-dependent GH shifts can be manipulated by adjusting an applied voltage to the system or by tuning the magnetic field strength. Thus, this device can serve as a tunable spin beam splitter.
Key words: Mesoscopic and Nanoscale Systems
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag, 2012
