Eur. Phys. J. B (2012) 85: 89
https://doi.org/10.1140/epjb/e2012-20729-7

Regular Article

Goos-Hänchen shift in bilayer graphene

Department of Physics and Electronic Information Engineering, Minjiang University, Fuzhou 350108, P.R. China

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Received: 2 September 2011
Received in final form: 8 December 2011
Published online: 5 March 2012

Abstract

The quantum Goos-Hänchen (GH) shift of an electron (massive Dirac fermion) at a potential step in bilayer graphene is investigated. We show that the GH shift depends on the step height, the kinetic energy of the electron and incident angle. It is found that the GH shift can be large (positive or negative) under the suitable conditions.