https://doi.org/10.1140/epjb/e2012-30149-4
Regular Article
Pecularities of Hall effect in GaAs/δ⟨Mn⟩/GaAs/InxGa1-xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content
1
Russian Research Centre “Kurchatov Institute”,
123182
Moscow,
Russia
2
Institute of Applied and Theoretical Electrodynamics, Russian
Academy of Sciences, 127412
Moscow,
Russia
3
Dipartimento di Fisica, Università di Roma “La
Sapienza”, piazzale Aldo Moro,
2- 00185
Roma,
Italy
4
Institute of Physics and Technology of RAS,
Nakhimovskii Avenue 34,
117218
Moscow,
Russia
5
Lappeenranta University of Technology,
Box 20, 53851
Lappeenranta,
Finland
6
Kotel’nikov Institute of Radio Engineering and
Electronics, RAS,
Fryazino, 141190
Moscow District,
Russia
a
e-mail: sergio.caprara@roma1.infn.it
Received: 19 February 2012
Received in final form: 20 April 2012
Published online: 20 June 2012
The transport properties of GaAs/δ⟨Mn⟩/GaAs/InxGa1−xAs/GaAs structures containing an InxGa1−xAs (x ≈ 0.2) quantum well (QW) and a Mn delta layer (DL) with relatively high content, about one Mn monolayer (ML), are studied. In these structures the DL is separated from the QW by GaAs spacer with thickness ds = 2–5 nm. All structures possess a non-metallic character of conductivity and display a maximum in the resistance temperature dependence Rxx(T) at the temperature ≈ 46 K, which is usually associated with the Curie temperature TC of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes pH in the QW does not decrease below TC as one ordinary expects in similar systems. On the contrary, the dependence pH(T) experiences a minimum at T = 80–100 K depending on the spacer thickness, then increases at low temperatures more strongly when ds is smaller, and reaches a giant value pH = (1−2) × 1013 cm-2. The obtained results are interpreted in the terms of magnetic proximity effect of the DL on the QW, inducing spin polarization of the holes in the QW. Strong structural and magnetic disorder in the DL and in the QW, leading to phase segregation in them is taken into consideration. The high pH value is explained as a result of the compensation of the positive normal Hall effect component by the negative anomalous Hall effect component.
Key words: Solid State and Materials
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag, 2012