Eur. Phys. J. B (2012) 85: 243
https://doi.org/10.1140/epjb/e2012-30127-x

Regular Article

Phonon transport in two-dimensional silicon thin film: influence of film width and boundary conditions on temperature distribution

Mechanical Engineering Department, King Fahd University of Petroleum & Minerals, 31261 Dhahran, Saudi Arabia

^a e-mail: bsyilbas@kfupm.edu.sa

Received: 27 January 2012
Received in final form: 14 March 2012
Published online: 16 July 2012

Abstract

Radiative phonon transport in two-dimensional silicon thin film is considered and equivalent equilibrium temperature is analyzed for different boundary conditions at the film faces. The influence of the film thickness on phonon transport is also examined and limiting film thickness for two-dimensional phonon transport is demonstrated. It is found that the two-dimensional phonon transport reduces to one-dimensional transport for the film width more than or equal to the twice of the thickness of the silicon film. Equivalent equilibrium temperature predicted, agrees well with the previous findings.