Eur. Phys. J. B (2012) 85: 251
https://doi.org/10.1140/epjb/e2012-20636-y

Regular Article

De Haas-van Alphen effect, magnetization, magnetoresistance and magnetostriction of GdB₄ as compared with TmB₄

¹ International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 53-529 Wroclaw, Poland
² B. Verkin Institute for Low Temperature Physics and Engineering of NASU, Lenin Ave.47, 61103 Kharkov, Ukraine
³ I. Frantsevich Institute for Problems of Materials Science of NASU, Krzhyzhanovsky Str.3, 03680 Kiev, Ukraine

^a e-mail: shitz@ipms.kiev.ua

Received: 4 August 2011
Received in final form: 13 April 2012
Published online: 30 July 2012

Abstract

De Haas-van Alphen (dHvA) effect measurements were performed on GdB₄ single crystal (R_300   K/R_4.2   K ≈ 12) in AFM state from 1.5 to 4.2 K in magnetic fields up to 14 T. 12 main branches of the oscillations were observed in the frequency range (0.1  ÷  28)  ×  10² T. The angular dependence of the dHvA spectrum suggests a strongly anisotropic Fermi surface. Corresponding cyclotron masses m^*_c are light, ranging from 0.2 to 0.8m₀. We studied additionally the magnetization of GdB₄, linear and volume magnetostriction, and magnetoresistance of GdB₄ in comparison with the same properties of TmB₄ single crystal above 1.5 K in the field of 0  ÷  14 T. At 4.2 K and H ||  ⟨ 110 ⟩  collinear to the GdB₄ easy magnetization axis the volume magnetostriction revealed the lattice contraction with the field rise excluding the range of H ≈ (11 ÷ 13) T, where the lattice expansion is accompanied by a sharp magnetization increase due to the destruction of its non-collinear magnetic structure. The magnetostricive behavior in GdB₄ and TmB₄ is different due to the CEF effect.