https://doi.org/10.1140/epjb/e2012-30076-4
Regular Article
Dielectric function of graphene based quantum dot under the uniaxial stress
A controllable red shift and band gap engineering by the stress process
1 Department of Physics, Azarbaijan University of Tarbiat Moallem, 53714-161 Tabriz, Iran
2 Department of Laser and Optical Engineering University of Bonab, 5551761167 Bonab, Iran
1
e-mail: Arash.phi@gmail.com
Received: 31 January 2012
Received in final form: 7 June 2012
Published online: 30 July 2012
The dielectric function of graphene based quantum dot under uniaxial pressure has been studied using the density functional theory (DFT) with local-density approximated (LDA) exchange-correlation functionals. The frequency dependent dielectric function has been obtained and the linear optical properties have been studied. It has been shown that stress results in red shift in which the absorption rate depends on the direction of the polarization and the value of the stress. It has also been shown that the uniaxial stress can remove or decrease the band gap obtained due to the geometrical isolation of the quantum dot.
Key words: Mesoscopic and Nanoscale Systems
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag, 2012