https://doi.org/10.1140/epjb/e2012-30236-6
Regular Article
Electronic and transport properties of a biased multilayer hexagonal boron nitride
1
State Key Laboratory of Mesoscopic Physics and Department of
Physics, Peking University, No. 5
Yiheyuan Road Haidian District, Beijing
100871, P.R.
China
2
Academy for Advanced Interdisciplinary Studies, Peking University,
No. 5 Yiheyuan Road Haidian
District, Beijing
100871, P.R.
China
a
e-mail: tangkechao1010@hotmail.com
b
e-mail: jinglu@pku.edu.cn
Received:
16
March
2012
Received in final form:
5
June
2012
Published online:
5
September
2012
We explore the electronic and transport properties out of a biased multilayer hexagonal boron nitride (h-BN) by first-principles calculations. The band gaps of multilayer h-BN decrease almost linearly with increasing perpendicular electric field, irrespective of the layer number N and stacking manner. The critical electric filed (E0) required to close the band gap decreases with the increasing N and can be approximated by E0 = 3.2 / (N − 1) (eV). We provide a quantum transport simulation of a dual-gated 4-layer h-BN with graphene electrodes. The transmission gap in this device can be effectively reduced by double gates, and a high on-off ratio of 3000 is obtained with relatively low voltage. This renders biased MLh-BN a promising channel in field effect transistor fabrication.
Key words: Solid State and Materials
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag, 2012