Eur. Phys. J. B (2012) 85: 333
https://doi.org/10.1140/epjb/e2012-30547-6

Regular Article

The effect of dilute nitrogen on nonlinear optical properties of the InGaAsN/GaAs single quantum wells

¹ Physics Department, Faculty of Arts and Science, Bitlis Eren University, 13000 Bitlis, Turkey
² Department of Material Science and Nanotechnology Engineering, Abdullah Gül University, Aşik Veysel Bulvari, Erciyes Teknopark, No: 4/67-A, 38039 Melikgazi, Kayseri, Turkey

^a e-mail: koraykoksal@yahoo.com

Received: 2 July 2012
Received in final form: 15 August 2012
Published online: 26 September 2012

Abstract

In this study, we investigate the linear and third order nonlinear optical properties of InGaAsN/GaAs depending on nitrogen content and laser dressing parameter. As theoretical models, band anticrossing and model solid theory are used. In order to obtain the electronic properties of the quantum well, the finite difference method is used. The laser beam affects the electronic properties of the quantum well by changing the shape of the confinement potential. This modification of the potential is determined by laser dressing parameter. By using dilute amount of nitrogen, conduction band and the depth of quantum well can be controlled. The strain which is introduced due to the presence of nitrogen can be compensated by using indium atoms. The electronic and the linear and third order nonlinear optical properties of InGaAsN/GaAs quantum well structure are obtained.