https://doi.org/10.1140/epjb/e2012-30369-6
Regular Article
Contactless electron effective mass determination in GaInNAs/GaAs quantum wells
Department of Physics, Faculty of Science, Anadolu
University, Yunus Emre
Campus, 26470
Eskisehir,
Turkey
a
e-mail: etiras@anadolu.edu.tr
Received:
8
May
2012
Received in final form:
21
June
2012
Published online:
26
December
2012
The electron effective masses in n-type modulation doped Ga0.7In0.3NyAs1−y/GaAs quantum wells with nitrogen mole fractions of y = 0.004 and 0.010 were investigated experimentally. Two experimental techniques: magnetic field dependent photoluminescence measurements and phonon-plasmon coupled-mode line-shape analysis of vibrational spectroscopy measurements, were employed in the investigations. In the first technique, the effective masses of the electrons have been determined from the diamagnetic energy shift dependencies up to 11 T. The vibrational properties of the samples were studied using Raman scattering spectroscopy at room temperature. The effective masses obtained from both two techniques are in good agreement with the current results in the literature.
Key words: Solid State and Materials
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag, 2012
