https://doi.org/10.1140/epjb/e2013-30833-9
Regular Article
Electron tunneling in a vertical graphene heterostructure
1 Department of Physics, Shaoxing
University, Shaoxing
312000, P.R.
China
2 Key Laboratory for Advanced
Microstructure Materials of the Ministry of Education and Department of Physics,
Tongji University, Shanghai
200092, P.R.
China
a e-mail: yhyan@fudan.edu.cn
Received:
12
September
2012
Received in final form:
14
January
2013
Published online:
8
April
2013
We theoretically investigate electron tunneling through a dual-gated graphene heterostructure, in which a thin barrier layer is sandwiched between two graphene layers. We show that the perfect tunneling of electrons presented in a single layer of graphene (also known as Klein tunneling) could be broken in this structure. Moreover, the structure could exhibit a large switching ratio of current, indicating the architecture may be promising for future electronic devices.
Key words: Mesoscopic and Nanoscale Systems
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag, 2013