Eur. Phys. J. B (2013) 86: 226
https://doi.org/10.1140/epjb/e2013-31011-y

Regular Article

Facile growth of monolayer MoS₂ film areas on SiO₂

¹ Chemistry, Physics, and Materials Science and Engineering, University of California, CA, 92521 Riverside, USA
² Departments of Physics and Electrical Engineering, Columbia University, NY, 10027 New York, USA
³ Sandia National Laboratories, 87185 Albuquerque, New Mexico, USA

^a e-mail: bartels@ucr.edu

Received: 6 November 2012
Received in final form: 11 February 2013
Published online: 20 May 2013

Abstract

Areas of single-layer MoS₂ film can be prepared in a tube furnace without the need for temperature control. The films were characterized by means of Raman spectroscopy, photoluminescence, low-energy electron diffraction and microscopy, and X-ray photoelectron spectroscopy and mapping. Transport measurements show n-doped material with a mobility of 0.26 cm² V^-1 s^-1.