Eur. Phys. J. B (2013) 86: 267 (2013)
https://doi.org/10.1140/epjb/e2013-31007-7

Regular Article

Strainology of Raman phonons in bended, periodically buckled, and rippled graphene

Instituto de Física, Universidade Federal do Rio de Janeiro, 68528 Rio de Janiero, Brasil

^a e-mail: mbsn@if.ufrj.br

Received: 4 November 2012
Received in final form: 11 March 2013
Published online: 12 June 2013

Abstract

We perform a thorough study of the strainology of the Raman response in graphene, for different external perturbations, within the framework of a long-wavelength, effective field theory for the vibrational spectrum. We calculate the evolution of the G-peak for the cases of compressive and stretching strains, and we discuss our results in connection to the physics of the G-peak redshift due to bending/uniaxial strain and the G-peak blueshift due to a substrate. Furthermore, we calculate the Raman response for the cases of periodic buckling of nanoribbons and within a toy model for ripples, and in both cases we are able to obtain a rather broad, D-like-peak in the Raman spectrum, even for the case of defect free graphene. We discuss all our theoretical results in connection to recent Raman spectroscopy experiments.