https://doi.org/10.1140/epjb/e2013-40779-5
Regular Article
Geometry and charge carrier induced stability in Casimir actuated nanodevices
Instituto de Física, Universidad Nacional Autónoma de
México, Apartado Postal
20-364, México
D.F. 01000,
Mexico
a
e-mail: raul@fisica.unam.mx
Received: 22 August 2013
Received in final form: 27 September 2013
Published online: 13 November 2013
In this work we demonstrate, that in Casimir actuated nanodevices, geometry and charge carriers concentration change the stability and the pull-in conditions that cause stiction. The stability is analyzed by calculating the bifurcation diagram of the capacitive switch as a function of plate thickness for Au and Si showing that previous calculations based on Lifshitz formula for half-spaces underestimated the stability conditions. Taking into account the size effect, we recalculate the bifurcation diagram for different metals and for Si with different carrier concentrations showing the change in the stability conditions.
Key words: Mesoscopic and Nanoscale Systems
© EDP Sciences, Società Italiana di Fisica and Springer-Verlag, 2013