Eur. Phys. J. B (2014) 87: 58
https://doi.org/10.1140/epjb/e2014-41100-0

Colloquium

Advances in wide bandgap SiC for optoelectronics

¹ Department of Photonics Engineering, Technical University of Denmark, 2800 Lyngby, Denmark
² Materials of Electronics Energy Technology, University of Erlangen-Nuremberg, 91058 Erlangen, Germany
³ School of Information and Communication Technology, KTH Royal Institute of Technology, 16440 Kista, Sweden
⁴ Department of Physics, Chemistry and Biology, Linköping University, 58183 Linköping, Sweden

^a e-mail: haou@fotonik.dtu.dk
^b Present address: Light extraction ApS, Diplomvej 373, 2800 Lyngby, Denmark
^c Present address: IMEC, Kapeldreef 75, 3001 Leuven,Belgium

Received: 23 December 2013
Received in final form: 21 January 2014
Published online: 10 March 2014

Abstract

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication. This paper will review the advances in fluorescent SiC for white light-emitting diodes, covering the poly-crystalline doped SiC source material growth, single crystalline epitaxy growth of fluorescent SiC, and nanofabrication of SiC to enhance the extraction efficiency for fluorescent SiC based white LEDs.