Eur. Phys. J. B (2014) 87: 263
https://doi.org/10.1140/epjb/e2014-50052-2

Regular Article

Preferential sites for InAsP/InP quantum wire nucleation using molecular dynamics

¹ Department Ingeniería Informática, C/ Chile S/N, Universidad de Cádiz, 11003 Cádiz, Spain
² Instituto de Microscopía Electrónica y Materiales, Departamento de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro, 11510 Puerto Real, Spain

^a e-mail: bernardomiguel.nuniez@uca.es

Received: 21 January 2014
Received in final form: 4 June 2014
Published online: 10 November 2014

Abstract

In this paper, stress fields at the surface of the capping layer of self-assembled InAsP quantum wires grown on an InP (001) substrate have been determined from atomistic models using molecular dynamics and Stillinger-Weber potentials. To carry out these calculations, the quantum wire compositional distribution was extracted from previous works, where the As and P distributions were determined by electron energy loss spectroscopy and high-resolution aberration-corrected Z-contrast imaging. Preferential sites for the nucleation of wires on the surface of the capping layer were studied and compared with (i) previous simulations using finite element analysis to solve anisotropic elastic theory equations and (ii) experimentally measured locations of stacked wires. Preferential nucleation sites of stacked wires were determined by the maximum stress location at the MD model surface in good agreement with experimental results and those derived from finite element analysis. This indicates that MD simulations based on empirical potentials provide a suitable and flexible tool to study strain dependent atom processes.