https://doi.org/10.1140/epjb/e2015-50774-5
Regular Article
Electronic instabilities and irradiation effects in the (TMTTF)2X series
1 Université Bordeaux, Centre de
Recherches Paul Pascal, CNRS, UPR CNRS 8641, 115 Avenue Dr. A. Schweitzer, 33600
Pessac,
France
2 Laboratoire de Physique des Solides,
Université Paris Sud, CNRS, UMR 8502, 91405
Orsay,
France
3 Architectures Moléculaires Matériaux
Nanostructurés, Institut Charles Gerhardt Montpellier, UMR 5253 CNRS-UM12-ENSCM-UM1,
8 rue de l’école
normale, 34296
Montpellier Cedex 5,
France
a
e-mail: pascale.foury@u-psud.fr
Received:
4
November
2014
Received in final form:
13
February
2015
Published online:
6
April
2015
The paper presents a single-crystal ESR study of a series of pristine and X-ray irradiated (TMTTF)2X salts, where TMTTF is tetramethyltetrathiafulvalene and X is either a centro-symmetrical (SbF6 and Br) or a non-centro-symmetrical (ReO4, ClO4, BF4, SCN and NO3) monovalent anion. Besides standard line-width and spin-susceptibility measurements, the analysis of the asymmetry of the ESR line shape allows to obtain simultaneous information on the electrical conductivity. This whole set of data is used to determine the charge and spin gaps related to the charge ordering (CO) and anion ordering (AO) ground states and their evolution as a function of X-ray irradiation damages. We show in particular that the sensibility of (TMTTF)2X salts to irradiation depends upon the nature of the anion X and that the CO ground state is drastically affected by irradiation damages at the difference of the AO ground state. We also present evidence of a CO transition and of a decoupling between the AO transition and the opening of a spin gap in (TMTTF)2NO3.
Key words: Solid State and Materials
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2015