Thermal conductivity of disordered AA-stacked bilayer graphene in the presence of bias voltage
Department of Physics, Razi University, 67149-67346 Kermanshah, Iran
Received: 21 February 2015
Received in final form: 21 May 2015
Published online: 6 July 2015
We study thermal conductivity of biased bilayer graphene doped with acceptor impurity atoms for AA-stacking in the context of tight binding model Hamiltonian. The effect of scattering by dilute charged impurities is discussed in terms of the self-consistent Born approximation. Green’s function approach has been implemented to find the behavior of thermal conductivity of carbon nanotubes within linear response theory. We have found the temperature dependence of thermal conductivity for different values of concentration and scattering strength of dopant impurity. Also the dependence of thermal conductivity on the chemical potential and bias voltage has been investigated in details. A peak appears in the plot of thermal conductivity versus chemical potential. Furthermore we find thermal transport rises with temperature for any impurity concentration and scattering strength.
Key words: Solid State and Materials
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2015