Impedance spectroscopy of vanadium modified BaBi2Nb2O9 ceramics*
1 Institute of Technology and Mechatronics, University of Silesia, 12, Żytnia St., 41-200 Sosnowiec, Poland
2 Institute of Information Technologies, ul. Mickiewicza 29, 40-085 Katowice, Poland
Received: 22 May 2015
Received in final form: 14 September 2015
Published online: 10 February 2016
In recent years a wide range of Aurivillius layered materials have been introduced. These novel materials are produced in many various forms such as fibers, thin films as well as bulk by using a number of processing routes. As advanced materials they are they have many interesting properties which include a number of useful electrical properties related to separated grain and grain boundary conductivity, impedance, activation energies, etc. In this paper these properties are described and discussed in detail. The electrical properties of the vanadium doped BaBi2Nb2O9 ceramic was measured over a wide range of temperatures by impedance spectroscopy (IS). The separated grain activation energy, calculated from Arrhenius characteristics at temperatures between room temperature and 600 °C, was 1 eV for 0 at.% of vanadium dopant and 1.2 eV for 10 at.%, whereas the activation energies in the grain boundary region were 0.97 and 1.15 eV, respectively. The obtained results suggest the significant role of vanadium dopant, causing ordering the crystalline structure.
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