https://doi.org/10.1140/epjb/e2016-60584-x
Regular Article
The interfacial properties of SrRuO3/MoS2 heterojunction: a first-principles study
School of Physics and Electronics Science, Hunan
University, Changsha, Hunan
410082, P.R.
China
a e-mail: mqcai@hnu.edu.cn
Received:
20
July
2015
Received in final form:
18
January
2016
Published online:
23
March
2016
First-principles calculation was used to study the interfacial properties of the SrRuO3 (1 1 1)/MoS2(√3 × √3) heterojunction. It is found that the huge magnetic moments in of monolayer MoS2 largely originate from the Ru-S hybridization for the Ru-terminated interface. Moreover, for the SrO-terminated interface, we studied mainly the metal and semiconductor contact characteristic. The calculated results show that the Schottky barrier height can be significantly reduced to zero for the SrO-terminated interface. Schottky barrier heights dominate the transport behavior of the SrRuO3/MoS2 interface. Our results not only have potential applications in spintronics devices, but also are in favour of the scaling of field effect transistors.
Key words: Solid State and Materials
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2016