Eur. Phys. J. B (2016) 89: 74
https://doi.org/10.1140/epjb/e2016-60894-y

Regular Article

G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors

School of Physics, University of New South Wales, 2033 Sydney, Australia

^a e-mail: z3486620@student.unsw.edu.au

Received: 18 November 2015
Received in final form: 22 January 2016
Published online: 21 March 2016

Abstract

Holes in cubic semiconductors have effective spin 3/2 and very strong spin orbit interaction. Due to these factors properties of hole bound states are highly unusual. We consider a single hole bound by a spherically symmetric potential, this can be an acceptor or a spherically symmetric quantum dot. Linear response to an external magnetic field is characterized by the bound state Lande g-factor. We calculate analytically g-factors of all bound states.