Eur. Phys. J. B (2017) 90: 260
https://doi.org/10.1140/epjb/e2017-80111-y

Regular Article

Electron–phonon heat exchange in quasi-two-dimensional nanolayers

Horia Hulubei National Institute for Physics and Nuclear Engineering, 077125 Măgurele, Romania

^a e-mail: dragos@theory.nipne.ro

Received: 23 February 2017
Received in final form: 1 October 2017
Published online: 18 December 2017

Abstract

We study the heat power P transferred between electrons and phonons in thin metallic films deposited on free-standing dielectric membranes. The temperature range is typically below 1 K, such that the wavelengths of the excited phonon modes in the system is large enough so that the picture of a quasi-two-dimensional phonon gas is applicable. Moreover, due to the quantization of the components of the electron wavevectors perpendicular to the metal film’s surface, the electrons spectrum forms also quasi two-dimensional sub-bands, as in a quantum well (QW). We describe in detail the contribution to the electron–phonon energy exchange of different electron scattering channels, as well as of different types of phonon modes. We find that heat flux oscillates strongly with thickness of the film d while having a much smoother variation with temperature (T_e for the electrons temperature and T_ph for the phonons temperature), so that one obtains a ridge-like landscape in the two coordinates, (d, T_e) or (d, T_ph), with crests and valleys aligned roughly parallel to the temperature axis. For the valley regions we find P ∝ T_e^3.5 – T_ph^3.5. From valley to crest, P increases by more than one order of magnitude and on the crests P cannot be represented by a simple power law. The strong dependence of P on d is indicative of the formation of the QW state and can be useful in controlling the heat transfer between electrons and crystal lattice in nano-electronic devices. Nevertheless, due to the small value of the Fermi wavelength in metals, the surface imperfections of the metallic films can reduce the magnitude of the oscillations of P vs. d, so this effect might be easier to observe experimentally in doped semiconductors.