https://doi.org/10.1140/epjb/e2018-90116-7
Regular Article
Studying the occupied and unoccupied electronic structure of LaCoO3 by using DFT+embedded DMFT method with the calculated value of U
1
School of Basic Sciences, Indian Institute of Technology Mandi,
Kamand,
Himachal Pradesh
175005, India
2
School of Engineering, Indian Institute of Technology Mandi,
Kamand,
Himachal Pradesh
175005, India
a e-mail: dutta.paromita1@gmail.com
Received:
2
March
2018
Received in final form:
1
June
2018
Published online: 3
August
2018
In this work, we present a systematic study of the occupied and unoccupied electronic states of LaCoO3 compound using DFT, DFT+U and DFT+embedded DMFT methods. The value of U used here is evaluated by using constrained DFT method and found to be ~6.9 eV. It is found that DFT result has limitations with energy positions of PDOS peaks due to its inability of creating a hard gap although the DOS distribution appears to be fine with experimental attributes. The calculated value of U is not an appropriate value for carrying out DFT+U calculations as it has created an insulating gap of ~1.8 eV with limitations in redistribution of DOS which is inconsistent with experimental spectral behavior for the occupied states mainly. However, this value of U is found to be an appropriate one for DFT+embedded DMFT method which creates a gap of ~1.1 eV. The calculated PDOS of Co 3d, La 5d, La 4f and O 2p states are giving a remarkably good explanation for the occupied and unoccupied states of the experimental spectra in the energy range ~–9.0 eV to ~12.0 eV.
Key words: Solid State and Materials
© EDP Sciences / Società Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature, 2018