Eur. Phys. J. B (2018) 91: 252
https://doi.org/10.1140/epjb/e2018-90293-3

Regular Article

Ion beam sputter deposition of TiO₂ films using oxygen ions

Systematic investigation of the correlation between process parameters and film properties

Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM), Permoserstraße 15, 04318 Leipzig, Germany

^a e-mail: carsten.bundesmann@iom-leipzig.de

Received: 27 April 2018
Received in final form: 17 June 2018
Published online: 15 October 2018

Abstract

TiO₂ thin films were grown by ion beam sputter deposition (IBSD) using oxygen ions, with the ion energy and geometrical parameters (ion incidence angle, polar emission angle, and scattering angle) being varied systematically. Metallic Ti and ceramic TiO₂ served as target materials. The thin films were characterized concerning thickness, growth rate, surface topography, structural properties, mass density, and optical properties. It was found that the scattering geometry has the main impact on the film properties. Target material, ion energy, and ion incidence angle have only a marginal influence. Former studies on reactive IBSD of TiO₂ using Ar and Xe ions reported equivalent patterns. Nevertheless, the respective ion species distinctively affects the film properties. For instance, mass density and the refractive index of the TiO₂ thin films are remarkably lower for sputtering with oxygen ions than for sputtering with Ar or Xe ions. The variations in the thin film properties are tentatively attributed to the angular and the energy distribution of the film-forming particles, especially, to those of the backscattered primary particles.