Eur. Phys. J. B (2018) 91: 272
https://doi.org/10.1140/epjb/e2018-90154-1

Regular Article

Band gap modulation of graphene on SiC

¹ Institute of Electronics–Bulgarian Academy of Sciences, 72 Tzarigradsko Chausee Blvd., Sofia 1784, Bulgaria
² Faculty of Physics, Sofia University, 5 Blvd J. Bourchier, Sofia 1164, Bulgaria
³ Faculty of Chemistry and Pharmacy, Sofia University, 1 J. Bourchier Blvd., Sofia 1164, Bulgaria

^a e-mail: skkolev@ie.bas.bg

Received: 9 March 2018
Received in final form: 16 July 2018
Published online: 5 November 2018

Abstract

A recipe on how to engineer a band gap in the energy spectrum for the carriers in graphene is conveyed. It is supported by a series of numerical simulations inspired by an analytical result based on the opening of a band gap in periodically corrugated graphene, e.g. the buffer layer grown on SiC at high temperatures.