Evolution of Floquet topological quantum states in driven semiconductors★
Georg-Simon-Ohm University of Applied Sciences,
2 Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974-0636, USA
3 Serin Physics Laboratory, Department of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ 08854-8019, USA
Received in final form: 10 May 2019
Published online: 18 September 2019
Spatially uniform excitations can induce Floquet topological bandstructures within insulators which have equal characteristics to those of topological insulators. Going beyond we demonstrate in this article the evolution of Floquet topological quantum states for electromagnetically driven semiconductor bulk matter. We show the direct physical impact of the mathematical precision of the Floquet-Keldysh theory when we solve the driven system of a generalized Hubbard model with our framework of dynamical mean field theory (DMFT) in the non-equilibrium. We explain the physical consequences of the topological non-equilibrium effects in our results for correlated sysems with impact on optoelectronic applications.
© EDP Sciences / Società Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature, 2019