Regular Article

Effects of heteroatom (B or N)-doping on the electronic and transport properties of armchair silicene nanoribbon

¹ College of Science, Guilin University of Technology, Guilin, 541004, P.R. China
² Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, Central South University, Changsha, 410083, P.R. China

^a e-mail: zhiyongwang520@gmail.com

Received: 28 May 2019
Received in final form: 17 September 2019
Published online: 11 November 2019

Abstract

We investigate the effects of heteroatom (boron or nitrogen atom)-doping on the electronic and transport properties of armchair silicene nanoribbon by means of the First-principles method. The calculated results show that the bandgap of armchair silicene nanoribbons (ASiNRs) can be modulated by changing the distance between two doping sites. The ASiNRs appear the semi-metallic property with two boron atoms doping, while the ASiNRs transform from semiconducting to metallic property with two nitrogen atoms doping. It can be found that the bandgaps of ASiNRs are decreasing with the increasing distance between boron atom and nitrogen atom. The transport properties of ASiNRs with B/N codoping are also investigated, the differential conductance appears an oscillatory behavior, it is hoped that it may be useful for designing the silicene-based electronic devices.