Regular Article

Electron transport in bulk n-doped 3C-SiC by using a non-equilibrium quantum kinetic theory

¹ School of Exact Sciences and Computing, Pontifical Catholic University of Goiás, Goiânia, Goiás, Brazil
² Condensed Matter Physics Department, Institute of Physics “Gleb Wataghin”, State University of Campinas-Unicamp, Campinas, SP, Brazil

^a e-mail: cloves@pucgoias.edu.br

Received: 15 June 2019
Received in final form: 12 October 2019
Published online: 25 November 2019

Abstract

In this paper we present a study on the charge transport in bulk n-type doped semiconductor 3C-SiC (in both, transient and steady state) using a non-equilibrium quantum kinetic theory derived from the method of nonequilibrium statistical operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the applied electric field of the basic macrovariables: the “electron drift velocity” and the “non-equilibrium temperature”. The “peak points” in time evolution of this macrovariables are derived and analyzed.