https://doi.org/10.1140/epjb/e2019-100316-0
Regular Article
Electron transport in bulk n-doped 3C-SiC by using a non-equilibrium quantum kinetic theory
1
School of Exact Sciences and Computing, Pontifical Catholic University of Goiás,
Goiânia,
Goiás,
Brazil
2
Condensed Matter Physics Department, Institute of Physics “Gleb Wataghin”, State University of Campinas-Unicamp,
Campinas,
SP,
Brazil
a e-mail: cloves@pucgoias.edu.br
Received:
15
June
2019
Received in final form:
12
October
2019
Published online: 25 November 2019
In this paper we present a study on the charge transport in bulk n-type doped semiconductor 3C-SiC (in both, transient and steady state) using a non-equilibrium quantum kinetic theory derived from the method of nonequilibrium statistical operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the applied electric field of the basic macrovariables: the “electron drift velocity” and the “non-equilibrium temperature”. The “peak points” in time evolution of this macrovariables are derived and analyzed.
Key words: Solid State and Materials
© EDP Sciences / Società Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature, 2019