Regular Article

Model of n-type quadruple δ-doped GaAs quantum wells

¹ Instituto de Investigaciones en Ciencias Básicas y Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa, Cuernavaca 62209, Mexico
² División Académica de Ingeniería y Arquitectura, Universidad Juárez Autónoma de Tabasco, Carretera Cunduacán-Jalpa de Méndez Km. 1 Col. La Esmeralda, Cunduacán 86690, Mexico
³ Centro de Investigación en Ingeniería y Ciencias Aplicadas, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa, Cuernavaca 62209, Mexico
⁴ Facultad de Ciencias Químicas e Ingeniería, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001 Col. Chamilpa, Cuernavaca 62209, Mexico
⁵ Departament of Physics, St. John’s University, 800 Utopia Pkwy, Jamaica, NY 11439-9000, New York, USA

^a e-mail: noverola86@gmail.com

Received: 22 August 2019
Received in final form: 18 December 2019
Published online: 28 January 2020

Abstract

Thomas Fermi (TF) approach was used to represent a model for the n-type quadruple δ-doped (QDD) system in GaAs. This is the first physical model in the literature for the QDD system. The energies, the wave functions and the Fermi energy (E_F) were calculated. These calculations were performed for different density of impurities in the doped layer (N_2D) and for different separation distances (d) between the doped layers. Preliminary results show that the value of the Fermi level for the first proposed model is well below its expected value. This observation is exploited for a second model consistent with the expected values of the E_F. Our results indicate that there is a limit at the bottom of the potential profile for a multilayered doped delta system. This has a great importance for calculations in optoelectronic and transport properties.