Erratum

Erratum to: 2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties^★

Eur. Phys. J. B (2020) 93: 32, https://doi.org/10.1140/epjb/e2020-100543-6

¹ Department of Physics, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran
² Computational Laboratory for Advanced Materials and Structures, Advanced Institute of Materials Science, TonDuc Thang University, Ho Chi Minh City, Vietnam
³ Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam
⁴ Department, College of Science, King Saud University, Riyadh, Saudi Arabia
⁵ Physics Department, College of Science, Basrah University, Basrah, Iraq
⁶ Nanotechnology and Catalysis Research Center (NANOCAT), University of Malaya, Kuala Lumpur 50603, Malaysia
⁷ Department of Instrumentation and Control Engineering, Faculty of Mechanical Engineering, CTU in Prague, Technicka 4, Prague 6 166 07, Czech Republic

^a e-mail: dominhhoat@tdtu.edu.vn

Received: 29 May 2020
Published online: 6 July 2020

This article has no abstract.