https://doi.org/10.1140/epjb/s10051-022-00400-2
Regular Article – Mesoscopic and Nanoscale Systems
Combined effects of hydrostatic pressure and electric field on the donor binding energy, polarizability, and photoionization cross-section in double GaAs/Ga
Al
As quantum dots
1
Laboratory of Intelligent Systems, Georesources and Renewable Energies (SIGER), Faculty of Sciences and Technology, Sidi Mohamed Ben Abdellah University, 2202, Fez, Morocco
2
Laboratory of Solid-State Physics, Department of Physics, Faculty of Science Dhar El Mahraz, Sidi Mohamed Ben Abdellah University, 1796, Fez, Morocco
3
Grupo de Materia Condensada-UdeA, Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No. 52-21, Medellín, Colombia
a
ayoub.eddahmouny@usmba.ac.ma
Received:
21
April
2022
Accepted:
8
August
2022
Published online:
25
August
2022
The present work focuses on the theoretical calculations of the ground-state binding energy of a shallow impurity, the impurity-related photoionization cross-section (PICS), and impurity-related polarizability under the combined effects of an electric field and hydrostatic pressure using a variational approach within the parabolic-band and effective-mass approximations. The low heterostructure is made up of two GaAs quantum dots separated by a Al
Ga
As central barrier. The applied electric field is considered to be directed along the growth-direction. As a general, the binding energy is obtained as a function of the impurity position and the electric field intensity. The PICS is calculated as a function of photon energy, for various impurity positions, with changes in hydrostatic pressure and/or electric field strength to prove their impact on their magnitude and shifting. Calculations are without accounting for the 
effect of the GaAs/AlGaAs and for a specific nanostructure size. In addition, we have shown how variations in hydrostatic pressure and electric field affect the polarizability of impurities at three distinct places in the nanostructure.
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