https://doi.org/10.1140/epjb/s10051-023-00580-5
Topical Review - Mesoscopic and Nanoscale Systems
A tutorial on the NEGF method for electron transport in devices and defective materials
Department of Physics, Birla Institute of Technology and Science, 333031, Pilani, Rajasthan, India
b
niladri@pilani.bits-pilani.ac.in
Received:
1
June
2023
Accepted:
8
August
2023
Published online:
22
August
2023
A tutorial on non-equilibrium Green’s function theory and its applications on nanoscale devices is presented. A stepwise tutorial presentation, starting from the concept of Green’s function to its application on nanoscale FETs is presented in this work. The mathematical implementation of the retarded and advanced Green’s function on the device channel is shown in detail. Also, the partitioning of Green’s function into a source Green’s function, a drain Green’s function, and a device channel Green’s function are shown. The construction of the Hamiltonian matrix by applying a non-interacting tight-binding methodology is shown for device channels with rectangular cross sections and line defects. Mathematical expressions for the transmission function and the terminal currents are obtained. Finally, a brief explanation of the concept of scattering contacts and the NEGF mode space extension is presented. This work is useful for understanding the application of Green’s function on nanoscale devices.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2023. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
