https://doi.org/10.1140/epjb/s10051-023-00632-w
Regular Article - Mesoscopic and Nanoscale Systems
Robust photogalvanic effect in the armchair B2C4P2 photodetector by vacancy and substitution-doping
1
College of Science, Hunan University of Science and Engineering, 425199, Yongzhou, China
2
Department of Physics, Jishou University, 416000, Jishou, China
3
School of Science, Jiangsu University of Science and Technology, 212003, Zhenjiang, China
a
fxhuse@huse.edu.cn
e
Lixiaowu555@huse.edu.cn
Received:
27
July
2023
Accepted:
1
December
2023
Published online:
18
January
2024
In this study, we investigated the linear photogalvanic effect (PGE) phenomena in an armchair photodetector device based on the B2C4P2 monolayer, which was predicted and studied in a previous work (J Phys Chem Lett 12:3436–3442, 2021). The produced photocurrents show a cosine relation with the incident angles, and the vacancies and substitution-doping can significantly enhance the photocurrents generated and form robust PGEs due to the incremental asymmetry in the B2C4P2 photodetector. Additionally, the armchair B2C4P2 photodetector possesses a very high extinction ratio corresponding to a more sensitive polarization detection. This work demonstrates that the B2C4P2 monolayer can be used as the high-performance PGE-driven photodetector in low-energy-consumption optoelectronics devices.
Supplementary Information The online version contains supplementary material available at https://doi.org/10.1140/epjb/s10051-023-00632-w.
Xi Fu and Jian Lin have contributed equally to this work and should be considered co-first authors.
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