https://doi.org/10.1140/epjb/s10051-024-00689-1
Regular Article - Solid State and Materials
Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer
Namangan State University, 316 Uychi Street, 716019, Namangan, Uzbekistan
Received:
8
January
2024
Accepted:
9
April
2024
Published online:
27
April
2024
This paper presents the results of numerical calculations of the change in the probability of an electron passing through a two-barrier heterostructure depending on the thickness of a thin InAs nanolayer embedded between the barrier and the barrier (AlAs). Using these calculations, the half-thickness of the centre of the electronic energy level (Г) was determined. The values of the first and second energy levels corresponding to the peak of the transition probability were also found.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
