https://doi.org/10.1140/epjb/s10051-024-00802-4
Regular Article - Statistical and Nonlinear Physics
Probing electron localization and delocalization in the selective long-range tight-binding model
Department of Solid-State Physics, Faculty of Science, University of Mazandaran, Babolsar, Iran
Received:
6
July
2024
Accepted:
30
September
2024
Published online:
23
October
2024
In this study, we perform a detailed investigation into the interplay between disorder-induced electron localization and long-range hopping amplitudes within the Selective Long-Range Tight-Binding Model (SLRTB). Through numerical simulations, we analyze the electronic properties of the system, with a focus on the participation ratio (PR), entanglement entropy (EE), energy spectrum, and the ratio of level spacings (
). Our results reveal a marked distinction between negative and positive long-range hopping amplitudes, manifesting in different electronic behaviors and transitions. Notably, we carry out a finite-size scaling analysis, identifying the critical point and exponents that characterize the system’s behavior near the transition. The investigation highlights the role of gapless regions in shaping the system’s PR, , and EE, and the influence of disorder on these properties. The SLRTB model proves to be an effective framework for understanding the effects of disorder and long-range hopping on electron dynamics, offering valuable insights into localization and delocalization phenomena.
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© The Author(s), under exclusive licence to EDP Sciences, SIF and Springer-Verlag GmbH Germany, part of Springer Nature 2024. Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
