https://doi.org/10.1140/epjb/s10051-025-00872-y
Regular Article - Solid State and Materials
Strain-modulation on electronic structures and magnetic properties of Fe doped monolayer 2H-MoS2: the first-principles calculation study
School of Physics, Ningxia University, 750021, Yinchuan, Ningxia, China
Received:
1
November
2024
Accepted:
26
January
2025
Published online:
5
February
2025
The first-principles calculation method is performed to explore the monolayer 2H-MoS2:Fe semiconductors with intrinsic ferromagnetism and strong ferromagnetic coupling by strain-modulation. In this study, we demonstrate that the biaxial strain can effectively regulate the distribution of local magnetic moment, magnetic coupling ground state types and strength. The studied results indicate that one FeMo dopant will bring 2 
local magnetic moment, which is not affected by strains in range of − 6~6%. However, electronic configuration, occupation and magnetic moment distribution are closely related to strains. Moreover, smaller compressive strain can effectively strengthen ferromagnetic interactions between two FeMo substitutions, and the most energy gains of ferromagnetic coupling reach to 153.9 meV under − 2% strain. However, the ferromagnetic ground state translates into antiferromagnetic one as strain in the range of − 6~ − 2.5%. The changes in magnetic moment and magnetic interaction originate from the competition between crystal-filed splitting and spin splitting under different strains. The theoretical results presented here predict that modulating the biaxial strain could be a very significant avenue to obtain intrinsic ferromagnetic 2H-MoS2:Fe semiconductors.
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Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law.
