https://doi.org/10.1140/epjb/e2016-70115-6
Regular Article
Intense laser effects on the optical properties of asymmetric GaAs double quantum dots under applied electric field
1 University of Bucharest, Faculty of Physics, P.O. Box MG 11, Strada Atomistilor 405, Magurele 077125, Bucharest, Romania
2 Physics Department, Politehnica University of Bucharest, Bucharest, Romania
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e-mail: doinitabejan@yahoo.com
Received: 25 February 2016
Received in final form: 11 April 2016
Published online: 1 June 2016
We investigated the combined effects of a non-resonant intense laser field and a static electric field on the electronic structure and the nonlinear optical properties (absorption, optical rectification) of a GaAs asymmetric double quantum dot under a strong probe field excitation. The calculations were performed within the compact density-matrix formalism under steady state conditions using the effective mass approximation. Our results show that: (i) the electronic structure and optical properties are sensitive to the dressed potential; (ii) under applied electric fields, an increase of the laser intensity induces a redshift of the optical absorption and rectification spectra; (iii) the augment of the electric field strength leads to a blueshift of the spectra; (iv) for high electric fields the optical spectra show a shoulder-like feature, related with the occurrence of an anti-crossing between the two first excited levels.
Key words: Mesoscopic and Nanoscale Systems
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2016