Eur. Phys. J. B (2017) 90: 162
https://doi.org/10.1140/epjb/e2017-80210-9

Regular Article

Nonlinear optical properties of asymmetric n-type double δ-doped GaAs quantum well under intense laser field

¹ Faculty of Education, Department of Mathematical and Science Education, Cumhuriyet University, 58140 Sivas, Turkey
² Faculty of Science, Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey
³ Faculty of Technology, Department of Optical Engineering, Cumhuriyet University, 58140 Sivas, Turkey
⁴ Faculty of Science, Department of Physics, Dokuz Eylül University, 35160 Buca, İzmir, Turkey

^a e-mail: fungan@cumhuriyet.edu.tr

Received: 10 April 2017
Received in final form: 14 June 2017
Published online: 4 September 2017

Abstract

The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double δ-doped GaAs quantum well is theoretically investigated. The confined energy levels and corresponding wave functions of this structure are calculated by solving the Schrödinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The optical responses are reported as a function of the δ-doped impurities density and the applied non-resonant intense laser field. Additionally, the calculated results also reveal that the non-resonant intense laser field can be used as a way to control the electronic and optical properties of the low dimensional semiconductor nano-structures.