Eur. Phys. J. B 26, 509-514 (2002)
https://doi.org/10.1140/epjb/e20020120

SiC film growth on Si(111) by supersonic beams of C₆₀

¹ IFN-CNR Institute for Photonics and Nanotechnology-Section of Trento, CeFSA-ITC Via Sommarive, 18 - 38050 Povo (TN), Italy
² INFM-Dipartimento di Fisica, Universitàà di Milano - Via Celoria, 16 - 20133 Milano, Italy

Corresponding author: ^a iannotta@cefsa.itc.it

Received: 20 November 2001
Published online: 15 April 2002

Abstract

The development of electronic devices based on Silicon Carbide (SiC) has been strongly limited by the difficulties in growing high quality crystalline bulk materials and films. We have recently elaborated a new technique for the synthesis of SiC on clean Si substrates by means of supersonic beams of C₆₀: the electronic and structural properties of the film can be controlled by monitoring the beam parameters, i.e. flux and particles energy and aggregation state. SiC films were grown in Ultra High Vacuum on Si(111)-7×7, at substrates temperatures of 800 °C, using two different supersonic beams of C₆₀: He and H₂ have been used as seeding gases, leading to particles energy of 5 eV and 20 eV, respectively. Surface characterisation was done in situ by Auger and X–Ray photoelectron spectroscopy, as well as by low energy electron diffraction and ex situ by atomic force microscopy technique. SiC films exhibited good structural and electronic properties, with presence of defects different from the typical triangular voids.