https://doi.org/10.1140/epjb/e20020119
Signature of Kondo effect in silicon quantum dots
1
DRFMC-SPSMS, CEA-Grenoble, 38054 Grenoble Cedex 9, France
2
CEA-LETI, CEA-Grenoble, 38054 Grenoble Cedex 9, France
Corresponding author: a msanquer@cea.fr
Received:
13
November
2001
Revised:
18
February
2002
Published online: 15 April 2002
We report observation of the Kondo effect in the Coulomb blockade oscillations of an impurity quantum dot (IQD). This IQD is formed in the channel of a 100 nm gate length Silicon MOSFET. The quantitative analysis of the anomalous temperature and voltage dependence for the drain-source current over a series of Coulomb blockade oscillations is performed. It strongly supports the Kondo explanation for the conductance behavior at very low temperature in this standard microelectronics device.
PACS: 73.21.La – Quantum dots / 73.23.Hk – Coulomb blockade; Single-electron tunneling
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2002