Eur. Phys. J. B 26, 503-508 (2002)
https://doi.org/10.1140/epjb/e20020119

Signature of Kondo effect in silicon quantum dots

¹ DRFMC-SPSMS, CEA-Grenoble, 38054 Grenoble Cedex 9, France
² CEA-LETI, CEA-Grenoble, 38054 Grenoble Cedex 9, France

Corresponding author: ^a msanquer@cea.fr

Received: 13 November 2001
Revised: 18 February 2002
Published online: 15 April 2002

Abstract

We report observation of the Kondo effect in the Coulomb blockade oscillations of an impurity quantum dot (IQD). This IQD is formed in the channel of a 100 nm gate length Silicon MOSFET. The quantitative analysis of the anomalous temperature and voltage dependence for the drain-source current over a series of Coulomb blockade oscillations is performed. It strongly supports the Kondo explanation for the conductance behavior at very low temperature in this standard microelectronics device.