https://doi.org/10.1140/epjb/e2004-00207-9
Weak localization effects in some metallic perovskites
1
Institut de Ciència de Materials de Barcelona, Campus de la UAB, 08193
Bellaterra, Catalunya, Spain
2
Departament de Física Aplicada i Òptica, Universitat de Barcelona,
Diagonal 647, 08028 Barcelona, Catalunya, Spain
3
Departamento de Física, CAC, CNEA, Av. Gral Paz 1499 (1650), San Martín, Buenos Aires, Argentina
Corresponding author: a gherranz@icmab.es
Received:
16
December
2003
Published online:
13
July
2004
We report a systematic study of the low-temperature electrical resistivity
of epitaxial nanometric SrRuO3 and LaNiO3 thin films. Weak
localization effects were taken into account in order to explain the
presence of minima in the 
–T curves. This description can be
rationalized by the fact that, at the given growth conditions, the mean free
path was comparable to the Fermi wavelength of the carriers, so that effects
arising from quantum interference of the electronic wavefunctions were
expected. The results reported here are of special interest to understand
the relevance of weak localization effects in oxides.
PACS: 72.15.Rn – Localization effects (Anderson or weak localization) / 72.80.Ga – Transition-metal compounds / 73.50.Bk – General theory, scattering mechanisms
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2004
