Eur. Phys. J. B 40, 433-437 (2004)
https://doi.org/10.1140/epjb/e2004-00228-4

Emission wavelength engineering of InAs/InP(001) quantum wires

¹ Instituto de Microelectrónica de Madrid (CNM-CSIC), Isaac Newton 8, 28760 Tres Cantos, Madrid, Spain
² Instituto de Ciencia de los Materiales, Universidad de Valencia, P.O. Box 2085, 46071 Valencia, Spain
³ Departamento de Ciencia de los Materiales e I. M. y Q. I., Universidad de Cádiz, Puerto Real, Cádiz, Spain

Corresponding author: ^a luisa@imm.cnm.csic.es

Received: 16 December 2003
Published online: 3 August 2004

Abstract

In this work we have studied the dependence of the optical properties of self-assembled InAs quantum wires (QWr) grown on InP(001) on the growth temperature of the InP cap layer, as a mean for controlling the InAs QWr size. Our main result is that we can tune the emission wavelength of InAs QWr either at 1.3 m or 1.55 m at room temperature. We suggest that the role of growth temperature is to modify the As/P exchange at the InAs QWr/InP cap layer interface and consequently the amount of InAs involved in the nanostructure. In this way, due to the enhancement of the As/P exchange, the higher the growth temperature of the cap layer, the smaller in height the InAs quantum wires. Accordingly, the emission wavelength is blue shifted with InP cap layer growth temperature as the electron and hole ground state moves towards higher energies. Optical studies related to the dynamics of carrier recombination and light emission quenching with temperature are also included.