https://doi.org/10.1140/epjb/e2005-00049-y
HSSH-model of Hole transfer in DNA
Institute of Mathematical Problems of Biology, Russian Academy of Sciences, Pushchino, Moscow Region, Russian Federation
Corresponding author: a lak@impb.psn.ru
Received:
1
August
2004
Published online:
25
February
2005
A method based on a selfconsistent solution of a quantum-mechanical system with temperature fluctuations described by Langevin equations is developed to calculate the charge carrier mobility in DNA. To model the charge transfer in DNA, a combined Holstein – SSH Hamiltonian is considered. As an example the hole mobility is calculated at room temperature for synthetic poly (G)/poly (C) duplex with regard to main structural fluctuations.
PACS: 71.20.Rv – Polymers and organic compounds / 72.80.Le – Polymers; organic compounds (including organic semiconductors)
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2005