https://doi.org/10.1140/epjb/e2006-00002-8
Structural characteristics of ultra-low k SiO2 thin films prepared using a molecular template
1
Department of Physics, Lanzhou University, Lanzhou 730000, P.R. China
2
Physics Staff Room, the Sixth Middle School of Shijiazhuang, Shijiazhuang 050051, P.R. China
Corresponding author: a wangyy@lzu.edu.cn
Received:
15
January
2005
Revised:
25
September
2005
Published online:
19
January
2006
Nanoporous SiO2 thin films with ultra-low dielectric constants were synthesized using a molecular template method. Uniform films with pore size between 10 and 20 nm were obtained as observed by N2 adsorption/desorption isotherms and transmission electron microscopy. Fourier transform infrared spectroscopy (FTIR) and differential thermal analysis were carried out to investigate the effect of n-hexane washing on structural properties before and after the surface modification process. The results showed that –OH bonds were substituted with –CH3 bonds in the films as a result of modification of trimethylchlorosilane (TMCS)/n-hexane solution. Four kinds of model were used to analyze the relationship between porosity and dielectric constant of the films, where the dielectric constant was determined from capacitance-voltage measurements. The investigation indicated that the corresponding relationship was in accord with that estimated by the Rayleigh model.
PACS: 77.55.+f – Dielectric thin films
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2006