Eur. Phys. J. B 58, 31-36 (2007)
https://doi.org/10.1140/epjb/e2007-00198-y

Electron mobility for a model Al_x Ga_1-x As/GaAs heterojunction under pressure

¹ Department of Physics, Inner Mongolia University, Hohhot, 010021, P.R. China
² CCAST (World Laboratory), P.O. Box 8730, Beijing, 100080, P.R. China

Corresponding author: ^a ndbaixp@imu.edu.cn

Received: 13 June 2006
Revised: 6 June 2007
Published online: 28 July 2007

Abstract

A variational method and a memory function approach are adopted to investigate the electron mobility parallel to the interface for a model Al_xGa_1-xAs/GaAs heterojunction and its pressure effect by considering optical phonon modes (including both of the bulk longitudinal optical (LO) in the channel side and interface optical (IO) phonons). The influence of a realistic interface heterojunction potential with a finite barrier and conduction band bending are taken into account. The properties of electron mobility versus Al concentration, electronic density and pressure are given and discussed, respectively. The results show that the electron mobility increases with Al concentration and electronic density, whereas decreases with pressure from 0 to 40 kbar obviously. The Al concentration dependent and the electron density dependent contributions to the electron mobility from the scattering of IO phonons under pressure becomes more obvious. The variation of electron mobility with the Al concentration and electron density are dominated by the properties of IO and LO phonons, respectively. The effect of IO phonon modes can not be neglected especially for higher pressure and electronic density.