https://doi.org/10.1140/epjb/e2007-00269-1
Spin hall accumulation in ballistic nanojunctions
1
INFN, Laboratori Nazionali di Frascati, P.O. Box 13, 00044 Frascati, Italy
2
Department of Physics “A. Volta”, University of Pavia, via Bassi 6, 27100 Pavia, Italy
3
Dip. Ingegneria dell'Informazione, Seconda Università di Napoli, 81031 Aversa (CE), Italy
Corresponding author: a stefano.bellucci@lnf.infn.it
Received:
4
May
2007
Revised:
12
July
2007
Published online:
5
October
2007
We propose a new scheme of spin filtering employing ballistic nanojunctions patterned in a two dimensional electron gas (2DEG). Our proposal is essentially based on the spin-orbit (SO) interaction generated by a lateral confining potential (β-SO coupling ). We demonstrate that the flow of a longitudinal unpolarized current through a ballistic T and X junction with this spin-orbit coupling will induce a spin accumulation which has opposite signs for the two lateral probes and is, therefore, the principal observable signature of the spin Hall effect in these devices.
PACS: 72.25.-b – Spin polarized transport / 72.20.My – Galvanomagnetic and other magnetotransport effects / 73.50.Jt – Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2007
