https://doi.org/10.1140/epjb/e2007-00273-5
The electronic properties of SiCAlN quaternary compounds
Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience (Ministry of Education), Tsinghua University, Beijing, 100084, P.R. China
Corresponding author: a junni@mail.tsinghua.edu.cn
Received:
15
June
2007
Revised:
31
August
2007
Published online:
5
October
2007
We have investigated the properties of SiCAlN quaternary compounds composed of SiC and AlN polytypes by first-principle calculations. We find that their band gaps have a large tunability and are sensitive to the polytype structures. Their electronic properties vary from wide-band-gap semiconducting to metallic due to the complex charge transfer between the two constituents SiC and AlN. The formation energies are also calculated. These results show SiCAlN quaternary compounds have potential applications in the electronic devices that can be tuned over a large wavelength range.
PACS: 74.70.Dd – Ternary, quaternary, and multinary compounds / 71.20.Nr – Semiconductor compounds / 71.20.-b – Electron density of states and band structure of crystalline solids
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2007
