https://doi.org/10.1140/epjb/e2008-00161-6
Γ-X mixing in GaAs-Ga1-xAlxAs quantum wells under hydrostatic pressure
1
Facultad de Ciencias, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, C.P. 62209, Morelos, Mexico
2
Facultad de Educación, Universidad de Antioquia, AA, 1226 Medellín, Colombia
3
Instituto de Física, Universidad de Antioquia, AA, 1226 Medellín, Colombia
4
Instituto de Física, UNICAMP, CP 6165, 13083-970 Campinas -, SP, Brazil
Corresponding author: a cduque@fisica.udea.edu.co
Received:
12
October
2007
Published online:
19
April
2008
The mixing between the Γ and X conduction-band valleys in GaAs-Ga1-xAlxAs quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ-X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ-X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga1-xAlxAs quantum wells.
PACS: 71.55.Eq – III-V semiconductors / 73.21.Fg – Quantum wells
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2008