https://doi.org/10.1140/epjb/e2008-00172-3
Conductance properties in spin field-effect transistors
1
Department of Physics, Institute of Sciences, PLA University of Science and Technology, Nanjing, 210007, China
2
Department of Physics, Shanghai Maritime University Shanghai, Shanghai, 200135, China
Corresponding author: a hfeiau@163.com
Received:
14
January
2008
Revised:
16
March
2008
Published online:
19
April
2008
Conductance properties in spin field-effect transistors (SFET) are studied by taking into account the Rashba spin-orbit coupling strength, the presence of external magnetic field, the angle between the direction of magnetization and the conductance band mismatch between the ferromagnetic contacts and the channel. It is shown that the conductance of the SFET has high peaks while the value of external magnetic field varies. These peaks become more and more pronounced with the potential barriers strength increasing. The conductance peaks also appear by increasing the strength of the spin-orbit coupling. It is found that the conductance exhibits quantum oscillating behavior when varying the angle between the direction of magnetization in the two contacts. The influence of conductance band mismatch between the contacts and channel is also discussed.
PACS: 73.40.Sx – Metal-semiconductor-metal structures / 72.25.Hg – Electrical injection of spin polarized carriers / 71.70.Ej – Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect / 73.21.-b – Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems / 72.25.Dc – Spin polarized transport in semiconductors
© EDP Sciences, Società Italiana di Fisica, Springer-Verlag, 2008
